Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs

Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes

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Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep...

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

We report the development of Al0.7Ga0.3N /AlN quantum wells with high internal quantum efficiency. All samples had identical well and barrier thickness but the III/V flux ratio was varied during growth by increasing the Ga flux. The luminescence spectra show single peaks which vary from 220 nm III /V 1 to 250 nm III /V 1 with internal quantum efficiency varying from 5% to 50%, respectively. To ...

Internal Quantum Efficiency and Carrier Injection Efficiency of c-plane, {101̄1} and {112̄2} InGaN/GaN-Based Light Emitting Diodes

The electroluminescence (EL) output power of c-plane light emitting diodes (LEDs) is much higher than that of semipolar {101̄1} and {112̄2} LEDs on sapphire at the same operation current. In order to elucidate the reasons for this behavior, we have fitted the pulsed EL data by the well-known ABC model to extract the internal quantum efficiency (IQE) and the carrier injection efficiency (CIE) to c...